dc.contributor.author | Erdoǧan, I.Y. and Güllü, O. | |
dc.date.accessioned | 2021-04-08T12:11:04Z | |
dc.date.available | 2021-04-08T12:11:04Z | |
dc.date.issued | 2010 | |
dc.identifier | 10.1016/j.apsusc.2010.01.122 | |
dc.identifier.issn | 01694332 | |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-77950516107&doi=10.1016%2fj.apsusc.2010.01.122&partnerID=40&md5=7c3e8b202fe36aec2492d1ae3c20f5cb | |
dc.identifier.uri | http://acikerisim.bingol.edu.tr/handle/20.500.12898/5105 | |
dc.description.abstract | In this work we report the optical, morphological and structural characterization and diode application of Cr 2 O 3 nanofilms grown on p-Si substrates by spin coating and annealing process. X-ray diffraction (XRD), non-contact mode atomic force microscopy (NC-AFM), ultraviolet-visible (UV-vis) spectroscopy and photoluminescence (PL) spectroscopy were used for characterization of nanofilms. For Cr 2 O 3 nanofilms, the average particle size determined from XRD and NC-AFM measurements was approximately 70 nm. Structure analyses of nanofilms demonstrate that the single phase Cr 2 O 3 on silicon substrate is of high a crystalline structure with a dominant in hexagonal (1 1 0) orientation. The morphologic analysis of the films indicates that the films formed from hexagonal nanoparticles are with low roughness and uniform. UV-vis absorption measurements indicate that the band gap of the Cr 2 O 3 film is 3.08 eV. The PL measurement shows that the Cr 2 O 3 nanofilm has a strong and narrow ultraviolet emission, which facilitates potential applications in future photoelectric nanodevices. Au/Cr 2 O 3 /p-Si metal/interlayer/semiconductor (MIS) diodes were fabricated for investigation of the electronic properties such as current-voltage and capacitance-voltage. Ideality factor and barrier height for Au//Cr 2 O 3 /p-Si diode were calculated as 2.15 eV and 0.74 eV, respectively. Also, interfacial state properties of the MIS diode were determined. The interface-state density of the MIS diode was found to vary from 2.90 × 10 13 eV -1 cm -2 to 8.45 × 10 12 eV -1 cm -2 . © 2010 Elsevier B.V. All rights reserved. | |
dc.language.iso | English | |
dc.source | Applied Surface Science | |
dc.title | Silicon MIS diodes with Cr 2 O 3 nanofilm: Optical, morphological/structural and electronic transport properties | |