dc.contributor.author | Yildirim, N. and Turut, A. and Turut, V. | |
dc.date.accessioned | 2021-04-08T12:10:49Z | |
dc.date.available | 2021-04-08T12:10:49Z | |
dc.date.issued | 2010 | |
dc.identifier | 10.1016/j.mee.2010.02.007 | |
dc.identifier.issn | 01679317 | |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-77955513056&doi=10.1016%2fj.mee.2010.02.007&partnerID=40&md5=34c6c440ade3c613baa56bf23d57f5c8 | |
dc.identifier.uri | http://acikerisim.bingol.edu.tr/handle/20.500.12898/5071 | |
dc.description.abstract | We have considered multi-Gaussian distribution of barrier-heights for non-interactive barrier inhomogeneities in the inhomogeneous Schottky diodes, and we have shown the presence of the intersecting behavior in the forward-bias current-voltage (I-V) curves for the double-Gaussian distribution model at low temperatures. We have tried to eliminate this effect by generating I-V curves at lower temperatures with the bias-dependent barrier-height expression which leads to the ideality factors greater than unity. For this calculation, we have obtained the expressions for the barrier-height change and ideality factor, and for bias-dependency of the BH for the multi-Gaussian model by following the literature. We have shown that the experimental forward-bias I-V curves coincide with the theoretical ones using the bias-dependent inhomogeneous BH expression at low and high temperatures in the double-Gaussian distribution of BHs. © 2010 Elsevier Ltd. All rights reserved. | |
dc.language.iso | English | |
dc.source | Microelectronic Engineering | |
dc.title | The theoretical and experimental study on double-Gaussian distribution in inhomogeneous barrier-height Schottky contacts | |