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dc.contributor.authorSoylu, M. and Abay, B.
dc.date.accessioned2021-04-08T12:10:49Z
dc.date.available2021-04-08T12:10:49Z
dc.date.issued2010
dc.identifier10.1016/j.physe.2010.09.012
dc.identifier.issn13869477
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-78650015806&doi=10.1016%2fj.physe.2010.09.012&partnerID=40&md5=3e51557b390af1a2ee490098f997a525
dc.identifier.urihttp://acikerisim.bingol.edu.tr/handle/20.500.12898/5070
dc.description.abstractThe theory of space charge limited currents (SCLC) was investigated at the range of 160300 K temperatures. Currentvoltage measurements show that the current flow is space charge limited and influenced by traps. At low voltages, the current density behavior suggests ohmic conductivity, while at higher voltages, a region of space-charge-limited current conduction was observed. Some essential parameters such as trap concentration, characteristic temperature and the trap center density was obtained from the temperature dependent current density in accordance with the theory for the exponential trap distributions. It was concluded that SCLC measurements may also be used to investigate the properties of deep levels in high electron mobility-InP semiconductors with insulators in the presence of interfacial trap states. © 2010 Elsevier B.V.
dc.language.isoEnglish
dc.sourcePhysica E: Low-Dimensional Systems and Nanostructures
dc.titleAnalysing space charge-limited conduction in Au/n-InP Schottky diodes


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