dc.contributor.author | Akbay, A. and Korkut, H. and Ejderha, K. and Korkut, T. and Türüt, A. | |
dc.date.accessioned | 2021-04-08T12:10:27Z | |
dc.date.available | 2021-04-08T12:10:27Z | |
dc.date.issued | 2011 | |
dc.identifier | 10.1007/s10967-011-1041-y | |
dc.identifier.issn | 02365731 | |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-79959853955&doi=10.1007%2fs10967-011-1041-y&partnerID=40&md5=4ec043fcd75b0c02c1d2110bf69eeea3 | |
dc.identifier.uri | http://acikerisim.bingol.edu.tr/handle/20.500.12898/5020 | |
dc.description.abstract | Different radiation and temperature effects on Schottky diodes are technologically important from radiation to sensing applications. We discussed irradiation and temperature dependent electronic properties of Pt/n-InP Schottky contact. Firstly we fabricated Pt/n-InP Schottky diode by magnetron sputtering technique. Then sample was exposed to 12 MeV electron irradiation. We measured I-V characteristics in 20, 160, 300 and 400 K before and after irradiation. Changes in forward currents for 160, 300 and 400 K were not remarkable but irradiation was effective only in 20 K slightly. Reverse currents of Pt/n-InP Schottky diode were increased in 20, 160, 300 and 400 K by irradiation. © 2011 Akadémiai Kiadó. | |
dc.language.iso | English | |
dc.source | Journal of Radioanalytical and Nuclear Chemistry | |
dc.title | Responses of Pt/n-InP Schottky diode to electron irradiation in different temperature conditions | |