dc.contributor.author | Soylu, M. | |
dc.date.accessioned | 2021-04-08T12:10:24Z | |
dc.date.available | 2021-04-08T12:10:24Z | |
dc.date.issued | 2011 | |
dc.identifier | 10.1016/j.mssp.2011.02.018 | |
dc.identifier.issn | 13698001 | |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-82455192277&doi=10.1016%2fj.mssp.2011.02.018&partnerID=40&md5=c78ab7d1e74f47ff959afba7360f7a76 | |
dc.identifier.uri | http://acikerisim.bingol.edu.tr/handle/20.500.12898/5007 | |
dc.description.abstract | The effect of the thickness of a Rhodamine B film on the electronic properties of Al/Rhodamine B/p-Si structures has been investigated. Thin film of Rhodamine B organic compound was deposited on p-Si substrate as an interfacial layer by spin-coating technique. Currentvoltage (IV) and capacitancevoltage (CV) measurements of the Al/Rhodamine B/p-Si structure were performed at room temperature. The effect of the thickness of the Rhodamine B organic layer was investigated by evaluating electrical parameters, such as the barrier height, ideality factor, series resistance and interface state density. It is seen that the thickness of the Rhodamine B layer significantly affects the electrical properties of the Al/Rhodamine B/p-Si structures. Here, the fact that increasing the thickness modifies these parameters implies that there is likely a depletion region inside the Rhodamine B film. It has been concluded that the interfacial layer of organic compound Rhodamine B increases the effective barrier height by influencing the space-charge region of the Al/Rhodamine B/p-Si Schottky junction. Furthermore, it is seen that the values of the barrier height are significantly larger than those of conventional Al/p-Si Schottky diodes. © 2011 Elsevier Ltd. All rights reserved. | |
dc.language.iso | English | |
dc.source | Materials Science in Semiconductor Processing | |
dc.title | The effect of thickness of organic layer on electronic properties of Al/Rhodamine B/p-Si structure | |