Some considerable effects on Pt/n-InP Schottky diode current-voltage characteristics due to electron irradiation

dc.contributor.author	Korkut, H. and Ejderha, K. and Akbay, A. and Öztürka, Y. and Korkut, T. and Türüt, A.
dc.date.accessioned	2021-04-08T12:10:19Z
dc.date.available	2021-04-08T12:10:19Z
dc.date.issued	2011
dc.identifier	10.1063/1.3663170
dc.identifier.issn	0094243X
dc.identifier.uri	https://www.scopus.com/inward/record.uri?eid=2-s2.0-84855419740&doi=10.1063%2f1.3663170&partnerID=40&md5=ef3230b556aaf1cea127bc1c34668516
dc.identifier.uri	http://acikerisim.bingol.edu.tr/handle/20.500.12898/4996
dc.description.abstract	Schottky contacts have impact role in a large perspective of electronic devices from sensing to switching and detecting. Radiation applications of Schottky contacts are popular fields at the present day. We fabricated a Pt/n-InP Schottky diode by using magnetron sputtering technique. Current-voltage characteristics were measured before and after 12 MeV electron irradiation at 260 and 320 K. Then electrical characteristics were analyzed. © 2011 American Institute of Physics.
dc.language.iso	English
dc.source	AIP Conference Proceedings
dc.title	Some considerable effects on Pt/n-InP Schottky diode current-voltage characteristics due to electron irradiation

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