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dc.contributor.authorSoylu, M. and Cavas, M. and Al-Ghamdi, A.A. and Al-Hartomy, O.A. and El-Tantawy, F. and Yakuphanoglu, F.
dc.date.accessioned2021-04-08T12:10:16Z
dc.date.available2021-04-08T12:10:16Z
dc.date.issued2012
dc.identifier.issn14544164
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84860491702&partnerID=40&md5=e31fb6690630daf3c56b97a668b4f207
dc.identifier.urihttp://acikerisim.bingol.edu.tr/handle/20.500.12898/4989
dc.description.abstractThe electrical characteristics and interface state density properties of Au/insulator/n-GaAs (MIS metal-insulator- semiconductor) diodes with insulator layers having different thickness have been analyzed by current-voltage and capacitance-voltage techniques at room temperature. The barrier height and ideality factor values for MIS Schottky diodes were found to be 0.66 eV, 1.67 and 0.86 eV, 3.75, respectively. The diodes show a non-ideal I-V behavior with the ideality factor greater than unity. This behavior is attributed to the interfacial insulator layer and the interface states. The obtained results show that the insulator layer modifies the electrical parameters such as interface state density, series resistance and reduces the reverse bias leakage current by more than two orders of magnitude. In addition, the interface distribution profiles (Dit) were extracted from the I-V measurements by taking into account the bias dependence of the effective barrier height for the Schottky diode. The energy distribution curves of the interface states of each sample were determined. The interface state density N ss of the diodes was changed from 4.7x10 12 eV -1 cm -2 in (Ec-0.647) eV to 6.35x10 14 eV -1 cm -2 in (Ec-0.619) eV for the initial sample AuD1 MIS diode and from 2.67x10 15 eV -1 cm -2 in (Ec-0.850) eV to 1.01x10 15 eV -1.cm -2 in (Ec-0.756) eV for AuD2 MIS diode.
dc.language.isoEnglish
dc.sourceJournal of Optoelectronics and Advanced Materials
dc.titleThe effects of the interfacial layer with interface states on controlling the electronic properties of Au/n-GaAs Schottky diode


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