Determination of contact parameters of Ni/n-GaP Schottky contacts
Tarih
2012Yazar
Duman, S. and Ejderha, K. and Yigit, Ö. and Türüt, A.
Üst veri
Tüm öğe kaydını gösterÖzet
The electrical analysis of Ni/n-GaP structure has been investigated by means of current-voltage (I-V), capacitance-voltage (C-V) and capacitance-frequency (C-f) measurements in the temperature range of 120-320 K in dark conditions. The forward bias I-V characteristics have been analyzed on the basis of standard thermionic emission (TE) theory and the characteristic parameters of the Schottky contacts (SCs) such as Schottky barrier height (SBH), ideality factor (n) and series resistance (R s) have been determined from the I-V measurements. The experimental values of SBH and n for the device ranged from 1.01 eV and 1.27 (at 320 K) to 0.38 eV and 5.93 (at 120 K) for Ni/n-GaP diode, respectively. The interface states in the semiconductor bandgap and their relaxation time have been determined from the C-f characteristics. The interface state density N ss has ranged from 2.08 × 10 15 (eV -1 m -2) at 120 K to 2.7 × 10 15 (eV -1 m -2) at 320 K. C ss has increased with increasing temperature. The relaxation time has ranged from 4.7 × 10 -7 s at 120 K to 5.15 × 10 -7 s at 320 K. © 2011 Elsevier Ltd. All rights reserved.
Bağlantı
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84861528688&doi=10.1016%2fj.microrel.2011.12.018&partnerID=40&md5=3781bad4bbb785f5836f1cee29554f48http://acikerisim.bingol.edu.tr/handle/20.500.12898/4962
Koleksiyonlar
DSpace@BİNGÖL by Bingöl University Institutional Repository is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 4.0 Unported License..