dc.contributor.author | Soylu, M. and Al-Ghamdi, A.A. and Al-Hartomy, O.A. and El-Tantawy, F. and Yakuphanoglu, F. | |
dc.date.accessioned | 2021-04-08T12:09:41Z | |
dc.date.available | 2021-04-08T12:09:41Z | |
dc.date.issued | 2014 | |
dc.identifier | 10.1016/j.physe.2014.08.001 | |
dc.identifier.issn | 13869477 | |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84907340824&doi=10.1016%2fj.physe.2014.08.001&partnerID=40&md5=34db55e3c91cd0bf31fd296e78b3d7c3 | |
dc.identifier.uri | http://acikerisim.bingol.edu.tr/handle/20.500.12898/4880 | |
dc.description.abstract | The electrical characteristics of sol-gel synthesized n-ZnO/p-GaAs heterojunction were reported. The values of barrier height and ideality factor for n-ZnO/p-GaAs heterojunction diode were determined to be 0.61 eV and 1.83, respectively. The I-V characteristics of the heterojunction diode exhibit a non-ideal behavior. The ideality factor which is greater than unity was attributed to the series resistance, interface states and interfacial layer. The modified Norde's function combined with conventional forward I-V method was used to obtain the parameters including the series resistance and barrier height (BH). The capacitance-voltage (C-V) measurements were performed in the range of 100 kHz to 1 MHz. The interface distribution profile (Dit) as a function of bias voltage was extracted from the C-V and Gadj-V characteristics. The interface state density of n-ZnO/p-GaAs diode is of the order of 1013 eV-1 cm-2. Also, the I-V characteristics of n-ZnO/p-GaAs heterojunction diode were investigated in the temperature range of 293-393 K. © 2014 Elsevier B.V. | |
dc.language.iso | English | |
dc.source | Physica E: Low-Dimensional Systems and Nanostructures | |
dc.title | The electrical characterization of ZnO/GaAs heterojunction diode | |