Illumination response on the electrical characterizations of Cr/n-GaAs/In photodiode

dc.contributor.author	Orak, I. and Korkut, H. and Yildirim, N. and Turut, A.
dc.date.accessioned	2021-04-08T12:09:18Z
dc.date.available	2021-04-08T12:09:18Z
dc.date.issued	2015
dc.identifier	10.1016/j.ijleo.2015.09.225
dc.identifier.issn	00304026
dc.identifier.uri	https://www.scopus.com/inward/record.uri?eid=2-s2.0-84946780541&doi=10.1016%2fj.ijleo.2015.09.225&partnerID=40&md5=f1c64a7a1fe1c99ce8204259f18d756f
dc.identifier.uri	http://acikerisim.bingol.edu.tr/handle/20.500.12898/4801
dc.description.abstract	In this study, we were investigated current-voltage (I-V) measurements of Cr/n type-GaAs photodiode and performed under dark, room light and illumination conditions at room temperature. The ideality factor (n) and barrier height (φβ) values of the device was calculated to be 1.1 and 0.91 eV, respectively. The photovoltaic parameters, such as short circuit current (Isc) and open circuit voltage (Voc) were acquired as 280 mV, 0.18 μA and 460 mV, 13.1 μA room light and under 30 mW/cm2 light intensity, respectively. The obtained results recommend that Cr/n-GaAs diode can be used as a photodevice in optoelectronic and photovoltaic applications. The device under light illumination shows a good photovoltaic behavior. © 2015 Elsevier GmbH. All rights reserved.
dc.language.iso	English
dc.source	Optik
dc.title	Illumination response on the electrical characterizations of Cr/n-GaAs/In photodiode

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