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dc.contributor.authorOrak, I. and Turut, A. and Toprak, M.
dc.date.accessioned2021-04-08T12:09:17Z
dc.date.available2021-04-08T12:09:17Z
dc.date.issued2015
dc.identifier10.1016/j.synthmet.2014.12.023
dc.identifier.issn03796779
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84920175712&doi=10.1016%2fj.synthmet.2014.12.023&partnerID=40&md5=70fdc0e83382122c2bb26ee939581d6d
dc.identifier.urihttp://acikerisim.bingol.edu.tr/handle/20.500.12898/4797
dc.description.abstractThe current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Al/Azure C/p-Si heterojunction fabricated with spin coating system have been investigated under illumination conditions, coating thickness at room temperature. Some heterojunction parameters such as ideality factor and barrier height were obtained to be 1.10, 1.15, and 1.26, and 0.57 eV, 0.64 eV and 0.65 eV for undoped, doped 2 μl/cm2, and 4 μl/cm2, respectively from the current-voltage measurement by thermionic emission current equation. It was observed that the ideality factor, barrier height and photovoltaic performance have increased and the device capacitance decreased with increasing organic layer thickness. © 2014 Elsevier B.V. All rights reserved.
dc.language.isoEnglish
dc.sourceSynthetic Metals
dc.titleThe comparison of electrical characterizations and photovoltaic performance of Al/p-Si and Al/Azure C/p-Si junctions devices


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