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dc.contributor.authorSoylu, M. and Orak, I. and Dayan, O. and Serbetci, Z.
dc.date.accessioned2021-04-08T12:08:55Z
dc.date.available2021-04-08T12:08:55Z
dc.date.issued2015
dc.identifier10.1016/j.microrel.2015.08.004
dc.identifier.issn00262714
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84939633215&doi=10.1016%2fj.microrel.2015.08.004&partnerID=40&md5=122cc204d9427ff38d9f234d6b292200
dc.identifier.urihttp://acikerisim.bingol.edu.tr/handle/20.500.12898/4722
dc.description.abstractRuthenium(II)-complex thin film, bearing pyridine-based tridentate was deposited on p-Si substrate by spin coating technique. The I-V measurements across the junction showed rectifying behavior. The reverse bias current of the heterojunction diode increased with increasing illumination intensity. The sensitivity to the light of I-V characteristics was attributed to the photocatalytic effect of Ruthenium(II)-complex. Ruthenium(II)-complex thin film exhibited a transparency higher than 70% in the visible part of the spectrum. The band gap of Ruthenium(II)-complex film was calculated to be 4.42 eV. The reflectance data can be analyzed to determine optical constants such as refractive index and dielectric constant. The results indicate that Ruthenium(II)-complex can be used in fabrication of high photosensitive diodes. © 2015 Elsevier Ltd. All rights reserved.
dc.language.isoEnglish
dc.sourceMicroelectronics Reliability
dc.titleA novel photodiode based on Ruthenium(II) complex containing polydentate pyridine as photocatalyst


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