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Current–voltage characteristics of Au/ZnO/n-Si device in a wide range temperature

dc.contributor.authorKocyigit, A. and Orak, I. and Çaldıran, Z. and Turut, A.
dc.date.accessioned2021-04-08T12:07:49Z
dc.date.available2021-04-08T12:07:49Z
dc.date.issued2017
dc.identifier10.1007/s10854-017-7646-3
dc.identifier.issn09574522
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85027040934&doi=10.1007%2fs10854-017-7646-3&partnerID=40&md5=d63df19752f83542df86b0182fe3d970
dc.identifier.urihttp://acikerisim.bingol.edu.tr/handle/20.500.12898/4452
dc.description.abstractAu/ZnO/n-Si device was obtained by using atomic layer deposition (ALD) technique, and it was characterized by I–V measurement in a wide temperature from 100 to 380 K with 20 K steps. XRD measurements were performed on ZnO thin film layer, and (002) and (201) peaks were seen in XRD pattern of the film. Surface morphology and cross section of the device were taken by SEM and discussed in the details. Some device parameters such as barrier height, ideality factor, series resistance were calculated by thermionic emission theory (TE), using Cheung’s and Norde’s functions. The Calculation results revealed that all device parameters strongly depended on temperature changing. In addition, interface states (Nss) graphs were plotted and discussed according to energy levels and measurement temperatures. It can be concluded that this device can be used in various technological applications in wide range temperatures in industry. © 2017, Springer Science+Business Media, LLC.
dc.language.isoEnglish
dc.sourceJournal of Materials Science: Materials in Electronics
dc.titleCurrent–voltage characteristics of Au/ZnO/n-Si device in a wide range temperature


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