• Türkçe
    • English
  • Türkçe 
    • Türkçe
    • English
  • Giriş
Öğe Göster 
  •   DSpace Ana Sayfası
  • 6.Araştırma Çıktıları / Research Outcomes(WOS-Scopus-TR-Dizin-PubMed)
  • Scopus İndeksli Yayınlar Koleksiyonu
  • Öğe Göster
  •   DSpace Ana Sayfası
  • 6.Araştırma Çıktıları / Research Outcomes(WOS-Scopus-TR-Dizin-PubMed)
  • Scopus İndeksli Yayınlar Koleksiyonu
  • Öğe Göster
JavaScript is disabled for your browser. Some features of this site may not work without it.

Silicon based photodetector with Ru(II) complexes organic interlayer

Thumbnail
Tarih
2019
Yazar
Karabulut, A. and Dere, A. and Dayan, O. and Al-Sehemi, A.G. and Serbetci, Z. and Al-Ghamdi, A.A. and Yakuphanoglu, F.
Üst veri
Tüm öğe kaydını göster
Özet
In present work, the electrical properties and illumination effects were investigated for the silicon based photodetector with organic Ru(II) complexes interfacial layer. The current-voltage (I-V) and capacitance/conductance-voltage (C/G-V) measurements were analyzed to determine electrical and photoelectrical properties under dark and different solar light intensity conditions. The reverse bias current values under light conditions were higher than dark conditions, and this situation demonstrates that the fabricated device displays a photoconducting behavior. Besides, some crucial electrical parameters such as series resistance, barrier height and ideality factor values of prepared device were calculated by using current-voltage measurements. The ideality factor and barrier height values of fabricated device were calculated as 9.42 and 0.59 for dark condition. Besides to these experiments, transient photocurrent and photo-capacitance/conductance were also investigated under different light conditions. It was determined from transient measurements that the fabricated device has a high sensitivity to light. The photoresponse of the diode was determined to be around 4479 ± 1.9 under 100 mW/cm2 illumination. The examined C/G-V characteristics of the fabricated device strongly depend on voltage and frequency. The analyzed results suggest that the fabricated Al/Ru(II) complexes/p-Si/Al device can be used in rapidly developing optoelectronic applications, especially for the organic materials-based photodetector technology. © 2018
Bağlantı
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85058710311&doi=10.1016%2fj.mssp.2018.11.035&partnerID=40&md5=a8b3cb29777f37f859b5133cb5044578
http://acikerisim.bingol.edu.tr/handle/20.500.12898/4161
Koleksiyonlar
  • Scopus İndeksli Yayınlar Koleksiyonu [1357]





Creative Commons License
DSpace@BİNGÖL by Bingöl University Institutional Repository is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 4.0 Unported License..

DSpace software copyright © 2002-2016  DuraSpace
İletişim | Geri Bildirim
Theme by 
Atmire NV
 

 



| Politika | Rehber | İletişim |

sherpa/romeo

Göz at

Tüm DSpaceBölümler & KoleksiyonlarTarihe GöreYazara GöreBaşlığa GöreKonuya GöreBy TypeBu KoleksiyonTarihe GöreYazara GöreBaşlığa GöreKonuya GöreBy Type

Hesabım

GirişKayıt

DSpace software copyright © 2002-2016  DuraSpace
İletişim | Geri Bildirim
Theme by 
Atmire NV