Corrigendum to “The structural and electrical characterization of Al/GO-SiO 2 /p-Si photodiode”, [Phys. E Low-dimens. Syst. Nanostruct. 103 (2018) 452–458](S1386947718306647)(10.1016/j.physe.2018.06.006)

dc.contributor.author	Kocyigit, A. and Karteri, İ. and Orak, I. and Uruş, S. and Çaylar, M.
dc.date.accessioned	2021-04-08T12:06:52Z
dc.date.available	2021-04-08T12:06:52Z
dc.date.issued	2019
dc.identifier	10.1016/j.physe.2019.01.028
dc.identifier.issn	13869477
dc.identifier.uri	https://www.scopus.com/inward/record.uri?eid=2-s2.0-85061082084&doi=10.1016%2fj.physe.2019.01.028&partnerID=40&md5=4d018aba84c3fc174a004e669b8cf816
dc.identifier.uri	http://acikerisim.bingol.edu.tr/handle/20.500.12898/4131
dc.description.abstract	The authors regret to miss the below information about the Acknowledgements in the print version. We would like to thank Kahramanmaraş Sütçü Imam University (Project No: 2017/1-82 M, 2017/5-10 YLS and 2018/2-2 YLS). The authors would like to apologise for any inconvenience caused. © 2018 Elsevier B.V.
dc.language.iso	English
dc.source	Physica E: Low-Dimensional Systems and Nanostructures
dc.title	Corrigendum to “The structural and electrical characterization of Al/GO-SiO 2 /p-Si photodiode”, [Phys. E Low-dimens. Syst. Nanostruct. 103 (2018) 452–458](S1386947718306647)(10.1016/j.physe.2018.06.006)

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