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dc.contributor.authorSarilmaz, A. and Ozel, F. and Karabulut, A. and Orak, İ. and Şahinkaya, M.A.
dc.date.accessioned2021-04-08T12:06:26Z
dc.date.available2021-04-08T12:06:26Z
dc.date.issued2020
dc.identifier10.1016/j.physb.2019.411821
dc.identifier.issn09214526
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85075374531&doi=10.1016%2fj.physb.2019.411821&partnerID=40&md5=a1a295609461713fcb16774eb9663842
dc.identifier.urihttp://acikerisim.bingol.edu.tr/handle/20.500.12898/3931
dc.description.abstractCu2MnSnS4 chalcogenide was obtained with the help of hot-injection technique and used as an interfacial thin layer to examine its behavior under varying temperature and frequency conditions. The well-known XRD, SEM and EDX techniques were utilized in the analysis of structural and content. To investigate the electrical properties, the variations in current, capacitance, conductance and impedance depending on the changing voltage were investigated. In the current-voltage measurements, measurements were made in distinct temperatures in addition to room temperature, and the effect of the temperature on the basic electrical parameters such as barrier height and ideality factor was investigated. The results showed that the temperature significantly affected the electrical properties. However, capacitance, impedance and conductance measurements were carried out for various frequencies. The performed experiments indicate that the fabricated heterojunction-based device using Cu2MnSnS4 chalcogenide could be evaluated in the wide temperature applications and enhanced as a capacitor in the electronic technology. © 2019 Elsevier B.V.
dc.language.isoEnglish
dc.sourcePhysica B: Condensed Matter
dc.titleThe effects of temperature and frequency changes on the electrical characteristics of hot-injected Cu2MnSnS4 chalcogenide-based heterojunction


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