Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-kinterfacial layer
dc.contributor.author | Abdulkerim KARABULUT and Ikram ORAK and Abdülmecit TÜRÜT | |
dc.date.accessioned | 2021-04-02T12:33:36Z | |
dc.date.available | 2021-04-02T12:33:36Z | |
dc.date.issued | 2018 | |
dc.identifier | 10.32571/ijct.456902 | |
dc.identifier.issn | 2602-277X | |
dc.identifier.uri | https://app.trdizin.gov.tr/makale/TXprd016VTFOUT09/electrical-characteristics-of-au-ti-hfo2-n-gaas-metal-insulator-semiconductor-structures-with-high-kinterfacial-layer | |
dc.identifier.uri | http://acikerisim.bingol.edu.tr/handle/20.500.12898/3679 | |
dc.source | International Journal of Chemistry and Technology (IJCT) | |
dc.title | Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-kinterfacial layer |
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