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dc.contributor.authorİKRAM ORAK and ADEM KOÇYİĞİT
dc.date.accessioned2021-04-02T12:13:54Z
dc.date.available2021-04-02T12:13:54Z
dc.date.issued2017
dc.identifiernull
dc.identifier.issnnull
dc.identifier.urihttps://app.trdizin.gov.tr/makale/TWpRek1UWTJOZz09/the-thickness-effect-of-insulator-layer-between-the-semiconductor-and-metal-contact-on-c-v-characteristics-of-al-si3n-p-si-device
dc.identifier.urihttp://acikerisim.bingol.edu.tr/handle/20.500.12898/3090
dc.sourcePamukkale Üniversitesi Mühendislik Bilimleri Dergisi
dc.titleThe thickness effect of insulator layer between the semiconductor and metal contact on C-V characteristics of Al/Si3N/p-Si device


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