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dc.contributor.authorErdoğan, İbrahim Y.
dc.contributor.authorGüllü, Ömer
dc.date.accessioned2014-09-25T11:20:36Z
dc.date.available2014-09-25T11:20:36Z
dc.date.issued2010
dc.identifier.citation492, 378-383tr_TR
dc.identifier.urihttp://acikerisim.bingol.edu.tr/handle/20.500.12898/275
dc.description.abstractThe high crystalline CuO nanofilms have been prepared by spin coating and annealing combined with a simple chemical method. The obtained films have been characterized by X-ray diffraction (XRD), Fourier transform infrared (FT-IR) spectroscopy, ultraviolet-vis (UV-vis) spectroscopy and photoluminescence (PL) spectroscopy. Structural analysis results demonstrate that the single phase CuO on Si (1 0 0) substrate is of high a crystalline structure with a dominant in monoclinic (1 1 1) orientation. FT-IR results confirm the formation of pure CuO phase. UV-vis absorption measurements indicate that the band gap of the CuO films is 2.64eV. The PL spectrum of the CuO films shows a broad emission band centered at 467 nm, which is consistent with absorption measurement. Also, Au/CuO/p-Si metal/interlayer/semiconductor (MIS) diodes have been fabricated. Electronic properties (current-voltage) of these structures were investigated. In addition, the interfacial state properties of the MIS diode were obtained. The interface-state density of the MIS diode was found to vary from 6.21 x 10(12) to 1.62 x 10(12) eV(-1) cm(-2).tr_TR
dc.language.isoengtr_TR
dc.publisherJOURNAL OF ALLOYS AND COMPOUNDStr_TR
dc.relation.isversionof10.1016/j.jallcom.2009.11.109tr_TR
dc.subjectMIS diodetr_TR
dc.subjectnanofilmstr_TR
dc.subjectCuOtr_TR
dc.subjectmetal oxidestr_TR
dc.subjectschottky barriertr_TR
dc.subjectband gaptr_TR
dc.titleOptical and structural properties of CuO nanofilm: Its diode applicationtr_TR
dc.typeArticletr_TR


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