Capacitance-voltage-frequency measurements of Al/Azure C/p type Si heterojunction

Abstract

In this study, we fabricated Al/Azure C/p type Si heterojunction by thermal evaparation. Electrical characterization of the device was investigated and calculated some diodes parameters, such as ideality factor (n) and barrier height (Φ). Capacitance –voltage and capacitance-frequency measurement of the device were taken at room temperature 100 kHz-1000 MHz step by 100 kHz. As can be seen the figure, the device has been shown that the measure capacitance decreases with increasing frequency and capacitance decreases with decreasing voltage at room temperature.