Surface coating of ZnO nanoparticles onto 6H-SiC(0001): Temperature-dependent rectifying behavior

dc.contributor.author	Soylu, M.
dc.date.accessioned	2021-04-08T12:08:35Z
dc.date.available	2021-04-08T12:08:35Z
dc.date.issued	2016
dc.identifier	10.1016/j.physe.2015.11.034
dc.identifier.issn	13869477
dc.identifier.uri	https://www.scopus.com/inward/record.uri?eid=2-s2.0-84953432481&doi=10.1016%2fj.physe.2015.11.034&partnerID=40&md5=ba8ac24079a20c5e32fbd3cc8a681435
dc.identifier.uri	http://acikerisim.bingol.edu.tr/handle/20.500.12898/4648
dc.description.abstract	This work reports on the detailed analysis of the temperature-dependent electrical parameters of the ZnO/6H-SiC barrier diodes. The effect of light on the diode current was also examined. It was found that the diode showed low sensitivity to light. No remarkable change in diode characteristics were observed at room temperature. The structure has a high rectification ratio of 1.096×104 at ±2 V with ideality factor of 2.46 at room temperature. The rectification ratio (RR) decreases with increasing temperature, as agree to other heterojunction structures. Some diode parameters such as zero-bias barrier height and ideality factor as temperature-dependent were calculated on the basis of the thermionic emission (TE) theory, by considering a Gaussian distribution (GD). © 2015 Elsevier B.V. All rights reserved.
dc.language.iso	English
dc.source	Physica E: Low-Dimensional Systems and Nanostructures
dc.title	Surface coating of ZnO nanoparticles onto 6H-SiC(0001): Temperature-dependent rectifying behavior

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