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dc.contributor.authorSoylu, M. and Gülen, M. and Sönmezoğlu, S.
dc.date.accessioned2021-04-08T12:08:30Z
dc.date.available2021-04-08T12:08:30Z
dc.date.issued2016
dc.identifier10.1080/14786435.2016.1210263
dc.identifier.issn14786435
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84979995837&doi=10.1080%2f14786435.2016.1210263&partnerID=40&md5=1876444882fd6dfff5cbd67f3190eed1
dc.identifier.urihttp://acikerisim.bingol.edu.tr/handle/20.500.12898/4622
dc.description.abstractTo investigate the conduction mechanism in an organic/inorganic heterojunction, poly(1.8-diaminocarbazole) (PDACz) on a p-type silicon substrate in a sandwich configuration were contacted with Al electrodes and temperature-dependent current–voltage measurements performed in the temperature range 280–380 K. It was found that the barrier height decreased and the ideality factor increased with decreasing temperature. Temperature and bias-dependent transition regimes were observed. These anomalies are explained by further analysis of the low- and high-field regions of the current–voltage curves. The trap density Hb and the characteristic trap energy Et were found to be 1.85 × 1017 cm−3 and 25 meV, respectively. Assuming that the trapped carrier density pt is higher than free-carrier density p, it is concluded that hole transport is dominated by space-charge-limited currents. © 2016 Informa UK Limited, trading as Taylor & Francis Group.
dc.language.isoEnglish
dc.sourcePhilosophical Magazine
dc.titleTemperature-dependent model for hole transport mechanism in a poly(1.8-diaminocarbazole)/Si structure


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