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dc.contributor.authorOrak, İ.
dc.date.accessioned2021-04-08T12:08:26Z
dc.date.available2021-04-08T12:08:26Z
dc.date.issued2016
dc.identifier10.1016/j.ssc.2016.08.004
dc.identifier.issn00381098
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84982273093&doi=10.1016%2fj.ssc.2016.08.004&partnerID=40&md5=02c57645b24710a6b669eecf56b7de60
dc.identifier.urihttp://acikerisim.bingol.edu.tr/handle/20.500.12898/4595
dc.description.abstractIn this study, the photodiode and diode characterizations of Al/n-ZnO/p type Si heterostructure have been investigated with current–voltage (I–V), capacitance–voltage (C–V) and conductance–voltage (G/ω–V) measurements. ZnO thin film has been deposited on p type Si by using atomic layer deposition technique. Some photodiode and diode parameters such as open circuit voltage (Voc), short circuit current (Isc), power efficiency(ηP), fill factor (FF), ideality factor (n) and barrier height (Φb) have calculated with I–V and C–V characteristics. Voc and Isc was found to be 0.094 V and 0.24 mA, respectively at 50 mW/cm2. n and Φb have been calculated 0.41 eV and 2.36, respectively. Especially, Negative capacitance has explained in the forward bias regions at room temperature and in dark condition. The C–V characterization of the Al/ZnO/p type Si heterostructure has been investigated under illumination condition. It can be said that the capacitance of device has been affected under illumination condition. © 2016 Elsevier Ltd
dc.language.isoEnglish
dc.sourceSolid State Communications
dc.titleThe performances photodiode and diode of ZnO thin film by atomic layer deposition technique


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