Heteroleptic neutral Ru(II) complexes based photodiodes

Elgazzar, E. and Dayan, O. and Serbetci, Z. and Dere, A. and Al-Sehemi, A.G. and Al-Ghamdi, A.A. and El-Tantawy, F. and Farooq, W.A. and Yakuphanoglu, F.

dc.contributor.author	Elgazzar, E. and Dayan, O. and Serbetci, Z. and Dere, A. and Al-Sehemi, A.G. and Al-Ghamdi, A.A. and El-Tantawy, F. and Farooq, W.A. and Yakuphanoglu, F.
dc.date.accessioned	2021-04-08T12:08:02Z
dc.date.available	2021-04-08T12:08:02Z
dc.date.issued	2017
dc.identifier	10.1016/j.physb.2017.03.038
dc.identifier.issn	09214526
dc.identifier.uri	https://www.scopus.com/inward/record.uri?eid=2-s2.0-85017589963&doi=10.1016%2fj.physb.2017.03.038&partnerID=40&md5=c27a86cf0ad603d6d5b833c9b73c4be4
dc.identifier.uri	http://acikerisim.bingol.edu.tr/handle/20.500.12898/4497
dc.description.abstract	The two complexes Ru(II) containing 2,6-bis(benzimidazol-2-yl)pyridine and 2-pyridine and 2-quinoline carboxylates were synthesized to fabricate organic photodiodes. The electrical properties of Au/Ru(II) complex (I)/n−Si/Al and Au/Ru(II)complex (II)/n−Si/Al diodes were investigated by current-voltage and capacitance-voltage measurements. The fabricated devices give a high rectification behavior with rectification ratio of 2.4 ×104 −2.1 ×103 at ±4 V. The diodes exhibited a high photoconductivity based on trap levels within band gap. The series resistance and barrier height were calculated from (C−V) measurements and compared to other of (I−V). The obtained results indicate that the prepared photodiodes can be used as photosensor for optoelectronic applications. © 2017
dc.language.iso	English
dc.source	Physica B: Condensed Matter
dc.title	Heteroleptic neutral Ru(II) complexes based photodiodes

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