Ruthenium(II) Complex Based Photodiode for Organic Electronic Applications

Abstract

In this study, the electrical and photoresponse properties of a photovoltaic device with Ruthenium(II) complex interfacial thin film were investigated. Heteroleptic Ru(II) complex including bidentate and tridentate ligands thin film was coated on n-Si substrate by the spin coating technique. From current–voltage (I–V) measurements of an Au/Ru(II)/n-Si photodiode, it is observed that the reverse bias current under light is higher than that of the current in the dark. This indicates that the photodiode exhibits a photoconducting characteristic. The transient measurements such as photocurrent, photocapacitance and photoconductance were performed under various illumination conditions. These measurements indicate that the photodiode has a high photoresponsivity. The electrical parameters such as barrier height (Φb), ideality factor (n) and series resistance (Rs) of the photodiode were determined from the analysis of I–V characteristics. Moreover, the capacitance/conductance–voltage characteristics of the photodiode highly depend on both voltage and frequency. Results show that the heterojunction can be used for various optoelectronic applications. © 2017, The Minerals, Metals & Materials Society.