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dc.contributor.authorBadrinezhad, L. and Bilkan, Ç. and Azizian-Kalandaragh, Y. and Nematollahzadeh, A. and Orak, I. and Altindal, S.
dc.date.accessioned2021-04-08T12:07:37Z
dc.date.available2021-04-08T12:07:37Z
dc.date.issued2018
dc.identifier10.1142/S0217979217502769
dc.identifier.issn02179792
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85027860760&doi=10.1142%2fS0217979217502769&partnerID=40&md5=dffd9ce25cad59d328ea29d2a7649d36
dc.identifier.urihttp://acikerisim.bingol.edu.tr/handle/20.500.12898/4382
dc.description.abstractCross-linked polyvinyl alcohol (PVA) graphene oxide (GO) nanocomposites were prepared by simple solution-mixing route and characterized by Raman, UV-visible and fourier transform infrared (FT-IR) spectroscopy analysis, X-ray diffraction (XRD) and scanning electron microscopy (SEM) techniques. The XRD pattern and SEM analysis showed significant changes in the nanocomposite structures, and the FT-IR spectroscopy results confirmed the chemical interaction between the GO filler and the PVA matrix. After these morphological characterizations, PVA-GO-based diodes were fabricated and their electrical properties were characterized using current-voltage (I-V) and impedance-voltage-frequency (Z-V-f) measurements at room temperature. Semilogarithmic I-V characteristics of diode showed a good rectifier behavior. The values of C and G/ω increased with decreasing frequency due to the surface/interface states (Nss) which depend on the relaxation time and the frequency of the signal. The voltage, dependent profiles of Nss and series resistance (Rs) were obtained from the methods of high-low frequency capacitance and Nicollian and Brews, respectively. The obtained values of Nss and Rs were attributed to the use of cross-linked PVA-GO interlayer at the Au/n-Si interface. © 2017 World Scientific Publishing Company.
dc.language.isoEnglish
dc.sourceInternational Journal of Modern Physics B
dc.titlePreparation and characterization of cross-linked poly (vinyl alcohol)-graphene oxide nanocomposites as an interlayer for Schottky barrier diodes


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