Utilizing embedded ultra-small Pt nanoparticles as charge trapping layer in flashristor memory cells
Date
2019Author
Orak, Ikram and Eren, Hamit and Biyikli, Necmi and Dana, Aykutlu
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In this study, a methodology for producing highly controlled and
uniformly dispersed metal nanoparticles were developed by atomic layer
deposition (ALD) technique. All-ALD grown thin film flash memory (TFFM)
cells and their applications were demonstrated with ultra-small platinum
nanoparticles (Pt-NPs) as charge trapping layer and control tunnel oxide
layer. The ultra-small Pt-NPs possessed sizes ranging from 2.3 to 2.6 nm
and particle densities of about 2.5 x 10(13) cm(-b). The effect of
Pt-NPs embedded on the storage layer for charging was investigated. The
charging effect of ultra-small Pt-NPs the storage layer was observed
using the electrical characteristics of TFFM. The Pt-NPs were observed
by a high-resolution scanning electron microscopy (HR-SEM). The memory
effect was manifested by hysteresis in the I-DS-V-DS and I-Ds-V-GS
curves. The charge storage capacity of the TFFM cells demonstrated that
ALD-grown Pt-NPs in conjunction with ZnO layer can be considered as a
promising candidate for memory devices. Moreover, ZnO TFFM showed a
I-ON/I-OFF ratio of up to 52 orders of magnitude and its threshold
voltage (V-th) was approximately -4.1 V using I-ds (-a/b) - V-gs curve.
Fabricated TFFMs exhibited clear pinch-off and show n-type field effect
transistor (FET) behavior. The role of atomic-scale controlled Pt-NPs
for improvement of devices were also discussed and they indicated that
ALD-grown Pt-NPs can be utilized in nanoscale electronic devices as
alternative quantum dot structures.
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