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Toplam kayıt 2, listelenen: 1-2
Capacitance-conductance-current-voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures
(2015)
We have studied the admittance and current-voltage characteristics of
the Au/Ti/Al2O3/n-GaAs structure. The Al2O3 layer of about 5 nm was
formed on the n-GaAs by atomic layer deposition. The barrier height (BH)
and ideality ...
Capacitance-conductance characteristics of Au/Ti/Al2O3/n-GaAs structures with very thin Al2O3 interfacial layer
(2015)
High-k Al2O3 with metallic oxide thickness of about 3 nm on n-type GaAs
substrate has been deposited by the atomic layer deposition (ALD)
technique. Thus, it has been formed the Au-Ti/Al2O3/n-GaAs MIS
structures. It has ...