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n-GaAs diode with photoresponsivity based on 3-aminorhodanine thin films
(2018)
In this paper, the electrical characteristics of a 3-aminorhodanine (aRh)/n-gallium arsenide (n-GaAs) heterostructure were investigated in dark and under various illumination conditions. Although the structure shows a low ...
Surface coating of ZnO nanoparticles onto 6H-SiC(0001): Temperature-dependent rectifying behavior
(2016)
This work reports on the detailed analysis of the temperature-dependent electrical parameters of the ZnO/6H-SiC barrier diodes. The effect of light on the diode current was also examined. It was found that the diode showed ...
Fabrication and characterization of transparent MEH-PPV/n-GaN (0 0 0 1) heterojunction devices
(2012)
n-GaN/MEH-PPV thin film heterojunction diode was fabricated by depositing MEH-PPV thin film using spin-coating process on n-GaN (0 0 0 1). The junction properties were evaluated by measuring I-V characteristics. I-V ...
The effect of thickness of organic layer on electronic properties of Al/Rhodamine B/p-Si structure
(2011)
The effect of the thickness of a Rhodamine B film on the electronic properties of Al/Rhodamine B/p-Si structures has been investigated. Thin film of Rhodamine B organic compound was deposited on p-Si substrate as an ...
GaAs heterojunction devices with MDMO-PPV thin films
(2014)
Au/MDMO-PPV/n-GaAs heterojunction devices were fabricated. The electronic properties of these devices were investigated at room temperature. The I-V characteristics of Au/MDMO-PPV/n-GaAs heterojunction devices show ...