Electrical properties of organic-inorganic aemiconductor device based on rhodamine-101

dc.contributor.author	Çakar, M. and Güllü, Ö. and Yildirim, N. and Türüt, A.
dc.date.accessioned	2021-04-08T12:11:17Z
dc.date.available	2021-04-08T12:11:17Z
dc.date.issued	2009
dc.identifier	10.1007/s11664-009-0838-8
dc.identifier.issn	03615235
dc.identifier.uri	https://www.scopus.com/inward/record.uri?eid=2-s2.0-68949096786&doi=10.1007%2fs11664-009-0838-8&partnerID=40&md5=f5da399b89488ecfdeaa03c34d000074
dc.identifier.uri	http://acikerisim.bingol.edu.tr/handle/20.500.12898/5133
dc.description.abstract	Rhodamine-101 (Rh101) thin films on n-type Si substrates have been formed by means of evaporation, thus Sn/Rh101/n-Si heterojunctions have been fabricated. The Sn/Rh101/n-Si devices are rectifying. The optical energy gaps have been determined from the absorption spectra in the wavelength range of 400 nm to 700 nm. Rh101 has been characterized by direct optical absorption with an optical edge at 2.05 ± 0.05 eV and by indirect optical absorption with an optical edge at 1.80 ± 0.05 eV. It was demonstrated that trap-charge-limited current is the dominant transport mechanism at large forward bias. A mobility value of μ = 7.31 × 10 -6 cm 2 V -1 s -1 for Rh101 has been obtained from the forward-bias current-voltage characteristics. © 2009 TMS.
dc.language.iso	English
dc.source	Journal of Electronic Materials
dc.title	Electrical properties of organic-inorganic aemiconductor device based on rhodamine-101

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