Optical and structural properties of CuO nanofilm: Its diode application
Abstract
The high crystalline CuO nanofilms have been prepared by spin coating and annealing combined with a simple chemical method. The obtained films have been characterized by X-ray diffraction (XRD), Fourier transform infrared (FT-IR) spectroscopy, ultraviolet-vis (UV-vis) spectroscopy and photoluminescence (PL) spectroscopy. Structural analysis results demonstrate that the single phase CuO on Si (1 0 0) substrate is of high a crystalline structure with a dominant in monoclinic (1 1 1) orientation. FT-IR results confirm the formation of pure CuO phase. UV-vis absorption measurements indicate that the band gap of the CuO films is 2.64 eV. The PL spectrum of the CuO films shows a broad emission band centered at 467 nm, which is consistent with absorption measurement. Also, Au/CuO/p-Si metal/interlayer/semiconductor (MIS) diodes have been fabricated. Electronic properties (current-voltage) of these structures were investigated. In addition, the interfacial state properties of the MIS diode were obtained. The interface-state density of the MIS diode was found to vary from 6.21 × 1012 to 1.62 × 1012 eV-1 cm-2. © 2009 Elsevier B.V. All rights reserved.
URI
https://www.scopus.com/inward/record.uri?eid=2-s2.0-76549123310&doi=10.1016%2fj.jallcom.2009.11.109&partnerID=40&md5=6e81d51fa7b0c34f5ccd285037fc07abhttp://acikerisim.bingol.edu.tr/handle/20.500.12898/5106
Collections
![Creative Commons License](http://i.creativecommons.org/l/by-nc-nd/4.0/88x31.png)
DSpace@BİNGÖL by Bingöl University Institutional Repository is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 4.0 Unported License..