Responses of Pt/n-InP Schottky diode to electron irradiation in different temperature conditions

dc.contributor.author	Akbay, A. and Korkut, H. and Ejderha, K. and Korkut, T. and Türüt, A.
dc.date.accessioned	2021-04-08T12:10:27Z
dc.date.available	2021-04-08T12:10:27Z
dc.date.issued	2011
dc.identifier	10.1007/s10967-011-1041-y
dc.identifier.issn	02365731
dc.identifier.uri	https://www.scopus.com/inward/record.uri?eid=2-s2.0-79959853955&doi=10.1007%2fs10967-011-1041-y&partnerID=40&md5=4ec043fcd75b0c02c1d2110bf69eeea3
dc.identifier.uri	http://acikerisim.bingol.edu.tr/handle/20.500.12898/5020
dc.description.abstract	Different radiation and temperature effects on Schottky diodes are technologically important from radiation to sensing applications. We discussed irradiation and temperature dependent electronic properties of Pt/n-InP Schottky contact. Firstly we fabricated Pt/n-InP Schottky diode by magnetron sputtering technique. Then sample was exposed to 12 MeV electron irradiation. We measured I-V characteristics in 20, 160, 300 and 400 K before and after irradiation. Changes in forward currents for 160, 300 and 400 K were not remarkable but irradiation was effective only in 20 K slightly. Reverse currents of Pt/n-InP Schottky diode were increased in 20, 160, 300 and 400 K by irradiation. © 2011 Akadémiai Kiadó.
dc.language.iso	English
dc.source	Journal of Radioanalytical and Nuclear Chemistry
dc.title	Responses of Pt/n-InP Schottky diode to electron irradiation in different temperature conditions

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