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dc.contributor.authorDuman, S. and Ejderha, K. and Yigit, Ö. and Türüt, A.
dc.date.accessioned2021-04-08T12:10:06Z
dc.date.available2021-04-08T12:10:06Z
dc.date.issued2012
dc.identifier10.1016/j.microrel.2011.12.018
dc.identifier.issn00262714
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84861528688&doi=10.1016%2fj.microrel.2011.12.018&partnerID=40&md5=3781bad4bbb785f5836f1cee29554f48
dc.identifier.urihttp://acikerisim.bingol.edu.tr/handle/20.500.12898/4962
dc.description.abstractThe electrical analysis of Ni/n-GaP structure has been investigated by means of current-voltage (I-V), capacitance-voltage (C-V) and capacitance-frequency (C-f) measurements in the temperature range of 120-320 K in dark conditions. The forward bias I-V characteristics have been analyzed on the basis of standard thermionic emission (TE) theory and the characteristic parameters of the Schottky contacts (SCs) such as Schottky barrier height (SBH), ideality factor (n) and series resistance (R s) have been determined from the I-V measurements. The experimental values of SBH and n for the device ranged from 1.01 eV and 1.27 (at 320 K) to 0.38 eV and 5.93 (at 120 K) for Ni/n-GaP diode, respectively. The interface states in the semiconductor bandgap and their relaxation time have been determined from the C-f characteristics. The interface state density N ss has ranged from 2.08 × 10 15 (eV -1 m -2) at 120 K to 2.7 × 10 15 (eV -1 m -2) at 320 K. C ss has increased with increasing temperature. The relaxation time has ranged from 4.7 × 10 -7 s at 120 K to 5.15 × 10 -7 s at 320 K. © 2011 Elsevier Ltd. All rights reserved.
dc.language.isoEnglish
dc.sourceMicroelectronics Reliability
dc.titleDetermination of contact parameters of Ni/n-GaP Schottky contacts


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