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dc.contributor.authorTaşçioglu, I. and Soylu, M. and Altindal, Ş. and Al-Ghamdi, A.A. and Yakuphanoglu, F.
dc.date.accessioned2021-04-08T12:10:00Z
dc.date.available2021-04-08T12:10:00Z
dc.date.issued2012
dc.identifier10.1016/j.jallcom.2012.07.001
dc.identifier.issn09258388
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84866331185&doi=10.1016%2fj.jallcom.2012.07.001&partnerID=40&md5=c541e9c1202ef9fb215584ff21905e95
dc.identifier.urihttp://acikerisim.bingol.edu.tr/handle/20.500.12898/4938
dc.description.abstractThe nanostructure CdO thin film was grown on p-GaAs substrate by the sol-gel method. Electrical characterization of Al/CdO/p-GaAs diode was performed using current-voltage and capacitance-conductance-voltage measurements. The ideality factor and barrier height values of the diode were obtained to be 2.29 and 0.62 eV, respectively. The energy distribution profiles of interface states were determined by means of Hill-Coleman method. The obtained results revealed that the series resistance and interface states have an important effect on electrical characteristics of Al/CdO/p-GaAs diode. © 2012 Published by Elsevier B.V.
dc.language.isoEnglish
dc.sourceJournal of Alloys and Compounds
dc.titleEffects of interface states and series resistance on electrical properties of Al/nanostructure CdO/p-GaAs diode


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