Effects of interface states and series resistance on electrical properties of Al/nanostructure CdO/p-GaAs diode

dc.contributor.author	Taşçioglu, I. and Soylu, M. and Altindal, Ş. and Al-Ghamdi, A.A. and Yakuphanoglu, F.
dc.date.accessioned	2021-04-08T12:10:00Z
dc.date.available	2021-04-08T12:10:00Z
dc.date.issued	2012
dc.identifier	10.1016/j.jallcom.2012.07.001
dc.identifier.issn	09258388
dc.identifier.uri	https://www.scopus.com/inward/record.uri?eid=2-s2.0-84866331185&doi=10.1016%2fj.jallcom.2012.07.001&partnerID=40&md5=c541e9c1202ef9fb215584ff21905e95
dc.identifier.uri	http://acikerisim.bingol.edu.tr/handle/20.500.12898/4938
dc.description.abstract	The nanostructure CdO thin film was grown on p-GaAs substrate by the sol-gel method. Electrical characterization of Al/CdO/p-GaAs diode was performed using current-voltage and capacitance-conductance-voltage measurements. The ideality factor and barrier height values of the diode were obtained to be 2.29 and 0.62 eV, respectively. The energy distribution profiles of interface states were determined by means of Hill-Coleman method. The obtained results revealed that the series resistance and interface states have an important effect on electrical characteristics of Al/CdO/p-GaAs diode. © 2012 Published by Elsevier B.V.
dc.language.iso	English
dc.source	Journal of Alloys and Compounds
dc.title	Effects of interface states and series resistance on electrical properties of Al/nanostructure CdO/p-GaAs diode

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