The comparison of electrical characterizations and photovoltaic performance of Al/p-Si and Al/Azure C/p-Si junctions devices

dc.contributor.author	Orak, I. and Turut, A. and Toprak, M.
dc.date.accessioned	2021-04-08T12:09:17Z
dc.date.available	2021-04-08T12:09:17Z
dc.date.issued	2015
dc.identifier	10.1016/j.synthmet.2014.12.023
dc.identifier.issn	03796779
dc.identifier.uri	https://www.scopus.com/inward/record.uri?eid=2-s2.0-84920175712&doi=10.1016%2fj.synthmet.2014.12.023&partnerID=40&md5=70fdc0e83382122c2bb26ee939581d6d
dc.identifier.uri	http://acikerisim.bingol.edu.tr/handle/20.500.12898/4797
dc.description.abstract	The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Al/Azure C/p-Si heterojunction fabricated with spin coating system have been investigated under illumination conditions, coating thickness at room temperature. Some heterojunction parameters such as ideality factor and barrier height were obtained to be 1.10, 1.15, and 1.26, and 0.57 eV, 0.64 eV and 0.65 eV for undoped, doped 2 μl/cm2, and 4 μl/cm2, respectively from the current-voltage measurement by thermionic emission current equation. It was observed that the ideality factor, barrier height and photovoltaic performance have increased and the device capacitance decreased with increasing organic layer thickness. © 2014 Elsevier B.V. All rights reserved.
dc.language.iso	English
dc.source	Synthetic Metals
dc.title	The comparison of electrical characterizations and photovoltaic performance of Al/p-Si and Al/Azure C/p-Si junctions devices

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