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dc.contributor.authorSoylu, M. and Al-Ghamdi, A.A. and Yakuphanoglu, F.
dc.date.accessioned2021-04-08T12:08:57Z
dc.date.available2021-04-08T12:08:57Z
dc.date.issued2015
dc.identifier10.1016/j.jpcs.2015.04.015
dc.identifier.issn00223697
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84928969682&doi=10.1016%2fj.jpcs.2015.04.015&partnerID=40&md5=75bf27966c00ac13bf6ac0a09fea46d7
dc.identifier.urihttp://acikerisim.bingol.edu.tr/handle/20.500.12898/4729
dc.description.abstractUndoped CdO films were prepared by sol-gel method. Transparent heterojunction diodes were fabricated by depositing n-type CdO films on the n-type GaN (0001) substrate. Current-voltage (I-V) measurements of the device were evaluated, and the results indicated a non-ideal rectifying characteristic with IF/IR value as high as 1.17×103 at 2 V, low leakage current of 4.88×10-6 A and a turn-on voltage of about 0.7 V. From the optical data, the optical band gaps for the CdO film and GaN were calculated to be 2.30 eV and 3.309 eV, respectively. It is evaluated that interband transition in the film is provided by the direct allowed transition. The n-GaN (0001)/CdO heterojunction device has an optical transmission of 50-70% from 500 nm to 800 nm wavelength range. © 2015 Elsevier Ltd.
dc.language.isoEnglish
dc.sourceJournal of Physics and Chemistry of Solids
dc.titleTransparent CdO/n-GaN(0001) heterojunction for optoelectronic applications


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