Show simple item record

dc.contributor.authorSoylu, M. and Ocaya, R. and Tuncer, H. and Al-Ghamdi, A.A. and Dere, A. and Sari, D.C. and Yakuphanoglu, F.
dc.date.accessioned2021-04-08T12:08:37Z
dc.date.available2021-04-08T12:08:37Z
dc.date.issued2016
dc.identifier10.1016/j.mee.2016.01.022
dc.identifier.issn01679317
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84956996343&doi=10.1016%2fj.mee.2016.01.022&partnerID=40&md5=12a7308e0be56277dc7ebbc3a7ebd391
dc.identifier.urihttp://acikerisim.bingol.edu.tr/handle/20.500.12898/4656
dc.description.abstractIn this work, we have synthesized modified nickel(II) phthalocyanine containing graphene oxide. Our emphasis is given to understand the effect of doping on the photophysical behavior of semiconducting graphene oxide/nickel(II) phthalocyanine composite films by using I-V and C-V spectroscopy. Al-p-Si/GO:NiPc/Au structures have rectifying behavior with a high rectification ratio of 6.99 × 104 at ± 10 V. Photophysical properties of the device are found to be improved for graphene oxide particles due to extra electron incorporation for n-type doping (GO dopant) to modified nickel(II) phthalocyanine which favors the electron and hole transfer processes. It is seen that the incorporation of graphene oxide nanoparticles into nickel(II) phthalocyanine accelerates the electron transfer process from GO nanoparticles to nickel(II) phthalocyanine. In contrast, before GO doping in nickel(II) phthalocyanine, hole transfer process occurs. © 2016 Elsevier B.V. All rights reserved.
dc.language.isoEnglish
dc.sourceMicroelectronic Engineering
dc.titleAnalysis of photovoltaic behavior of Si-based junctions containing novel graphene oxide/nickel(II) phthalocyanine composite films


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record