Basit öğe kaydını göster

dc.contributor.authorSevgili, Ö. and Yılmaz, S. and Altındal, Ş. and Bacaksız, E. and Bilkan, Ç.
dc.date.accessioned2021-04-08T12:07:58Z
dc.date.available2021-04-08T12:07:58Z
dc.date.issued2017
dc.identifier10.1007/s40010-017-0366-5
dc.identifier.issn03698203
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85026756989&doi=10.1007%2fs40010-017-0366-5&partnerID=40&md5=395b2bcd03d93354bc8e1c01193d804e
dc.identifier.urihttp://acikerisim.bingol.edu.tr/handle/20.500.12898/4478
dc.description.abstractIn order to interpret the current-conduction mechanisms of the Te/NaF:CdS/SnO2 structure, current–voltage (I–V) measurements were carried out in the temperature range of 80–400 K. Experimental results show that the main electrical parameters such as reverse-saturation current (I0), ideality factor (n) and zero-bias barrier height (ϕB0) values were found to be strong functions of temperature. The I0, n and ϕB0 values were found as 3.16 × 10−12 A, 17.84 and 0.232 eV at 80 K and 2.85 × 10−7 A, 1.40 and 0.877 eV at 400 K, respectively. Therefore, we have attempted to draw ϕB0 versus q/2kT plot in order to obtain the evidence of a Gaussian distribution of the barrier heights (BHs) and this plot shows two straight lines with different slopes. From these plots, mean BH (ϕ¯ B 0) = 0.673 eV and zero-bias standard deviation (σs) = 0.079 V in the first region (80–170 K), ϕ¯ B 0= 1.279 eV and σs = 0.160 V in the second region (200–400 K) have been obtained, respectively. The values of Richardson constant (A*) were obtained from the modified Richardson plot as 21.43 A cm−2 K−2 (200–400 K) and 16.07 A cm−2 K−2 (80–170 K), respectively. This 21.43 A cm−2 K−2 value of A* for the first region is in very close agreement with the known theoretical value of 23 A cm−2 K−2 for n-type CdS. It has been concluded that the temperature dependent I–V characteristics of the Te/NaF:CdS/SnO2 structure can be successfully explained by the basis of thermionic emission mechanism with double Gaussian distribution of the BHs rather than other mechanisms. © 2017, The National Academy of Sciences, India.
dc.language.isoEnglish
dc.sourceProceedings of the National Academy of Sciences India Section A - Physical Sciences
dc.titleThe Investigation of Current-Conduction Mechanisms of Te/NaF:CdS/SnO2 Structure in Wide Temperature Range of 80–400 K


Bu öğenin dosyaları:

DosyalarBoyutBiçimGöster

Bu öğe ile ilişkili dosya yok.

Bu öğe aşağıdaki koleksiyon(lar)da görünmektedir.

Basit öğe kaydını göster