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The structural analysis of MWCNT-SiO2 and electrical properties on device application

dc.contributor.authorKocyigit, A. and Orak, I. and Karteri, İ. and Uruş, S.
dc.date.accessioned2021-04-08T12:07:58Z
dc.date.available2021-04-08T12:07:58Z
dc.date.issued2017
dc.identifier10.1016/j.cap.2017.05.006
dc.identifier.issn15671739
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85019845938&doi=10.1016%2fj.cap.2017.05.006&partnerID=40&md5=c765f608a197f8604930286f216cf3b0
dc.identifier.urihttp://acikerisim.bingol.edu.tr/handle/20.500.12898/4477
dc.description.abstractAl/MWCNT-SiO2/p-Si device were obtained using chemical techniques and characterized using the I-V (under dark and light conditions) and C-V measurements depending on various frequency. MWCNT-SiO2 composite layer of the device were also characterized using XRD, FTIR, SEM, TEM and TGA measurements. These all results indicated that the MWCNT-SiO2 layer synthesized successfully on Si wafer as a composite form with chemical processes and spin coating. I-V measurements showed that device has good rectifying properties, small saturation current and good photodiode properties. Solar cell conversion efficiency (ηp) and fill factor (FF) values of the device also were calculated as 0.12% and 47.6%, respectively. It could be seen from C-V measurements that capacitance and conductance properties of the device strongly depended on frequency and voltage. It may be used and improved this device as rectifier, photodiode and capacitor in the future. © 2017 Elsevier B.V.
dc.language.isoEnglish
dc.sourceCurrent Applied Physics
dc.titleThe structural analysis of MWCNT-SiO2 and electrical properties on device application


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