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The Effect of Thermal Annealing and Measurement Temperature on Interface State Density Distribution and Time Constant in Ni/n-GaP Rectifying Contacts

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Date
2018
Author
Ejderha, K. and Orak, I. and Duman, S. and Turut, A.
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Abstract
The capacitance–frequency (C–f) and conductance–frequency (G–f) characteristics of the as-deposited and 400°C annealed Ni/n-GaP/Al diode were measured in a temperature range of 100–320 K with steps of 20 K. The values of interface state density Nss and their time constant were obtained from the temperature-dependent C–f and G–f characteristics in the measurement frequency range of 5.0 kHz to 5 MHz. The effect of annealing and measurement temperature on Nss and time constant of a Ni/n-GaP Schottky diode were analyzed from the forward bias voltage to the reverse bias voltage − 0.60 with steps of 0.30 V. The Nss value ranges from 8.8 × 1011 cm−2eV−1 at 0.60 V to 5.71 × 1011 cm−2eV−1 at − 0.60 V for the as-deposited diode, and 1.3 × 1012 cm−2eV−1 at 0.60 V to 5.5 × 1011 cm−2eV−1 at − 0.60 V for the 400°C annealed diode at a measurement temperature of 300 K. The interface state density value increases with high measurement temperature for the as-deposited and annealed diode. © 2018, The Minerals, Metals & Materials Society.
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https://www.scopus.com/inward/record.uri?eid=2-s2.0-85043401910&doi=10.1007%2fs11664-018-6192-y&partnerID=40&md5=c1019a1e299eb65b134a343eb7fa18db
http://acikerisim.bingol.edu.tr/handle/20.500.12898/4321
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