The Effect of Thermal Annealing and Measurement Temperature on Interface State Density Distribution and Time Constant in Ni/n-GaP Rectifying Contacts
Tarih
2018Yazar
Ejderha, K. and Orak, I. and Duman, S. and Turut, A.
Üst veri
Tüm öğe kaydını gösterÖzet
The capacitance–frequency (C–f) and conductance–frequency (G–f) characteristics of the as-deposited and 400°C annealed Ni/n-GaP/Al diode were measured in a temperature range of 100–320 K with steps of 20 K. The values of interface state density Nss and their time constant were obtained from the temperature-dependent C–f and G–f characteristics in the measurement frequency range of 5.0 kHz to 5 MHz. The effect of annealing and measurement temperature on Nss and time constant of a Ni/n-GaP Schottky diode were analyzed from the forward bias voltage to the reverse bias voltage − 0.60 with steps of 0.30 V. The Nss value ranges from 8.8 × 1011 cm−2eV−1 at 0.60 V to 5.71 × 1011 cm−2eV−1 at − 0.60 V for the as-deposited diode, and 1.3 × 1012 cm−2eV−1 at 0.60 V to 5.5 × 1011 cm−2eV−1 at − 0.60 V for the 400°C annealed diode at a measurement temperature of 300 K. The interface state density value increases with high measurement temperature for the as-deposited and annealed diode. © 2018, The Minerals, Metals & Materials Society.
Bağlantı
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85043401910&doi=10.1007%2fs11664-018-6192-y&partnerID=40&md5=c1019a1e299eb65b134a343eb7fa18dbhttp://acikerisim.bingol.edu.tr/handle/20.500.12898/4321
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