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dc.contributor.authorOrak, İkram
dc.contributor.authorTürüt, Abdulmecit
dc.date.accessioned2014-07-14T07:42:01Z
dc.date.available2014-07-14T07:42:01Z
dc.date.issued2014-05-01
dc.identifier.citationAzure C, p type Sitr_TR
dc.identifier.urihttp://hdl.handle.net/11472/172
dc.description.abstractIn this study, we fabricated Al/Azure C/p type Si heterojunction by thermal evaparation. Electrical characterization of the device was investigated and calculated some diodes parameters, such as ideality factor (n) and barrier height (Φ). Capacitance –voltage and capacitance-frequency measurement of the device were taken at room temperature 100 kHz-1000 MHz step by 100 kHz. As can be seen the figure, the device has been shown that the measure capacitance decreases with increasing frequency and capacitance decreases with decreasing voltage at room temperature.tr_TR
dc.language.isoengtr_TR
dc.publisherInternational Workshop on Flexible Bio-and Organic Printed Electronicstr_TR
dc.subjectCapacitancetr_TR
dc.subjectvoltage measurementtr_TR
dc.titleCapacitance-voltage-frequency measurements of Al/Azure C/p type Si heterojunctiontr_TR
dc.typePresentationtr_TR


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