Ara
Toplam kayıt 5, listelenen: 1-5
Fabrication and characterization of light-sensing device based on transparent ZnO thin film prepared by sol-gel
(2016)
In this work, sol-gel method is used for obtaining the ZnO films. The device is constructed from aluminum and n-type ZnO thin film deposited on top of an n type-silicon substrate. Although the structure is formed from the ...
Properties of sol-gel synthesized n-ZnO/n-GaN (0001) isotype heterojunction
(2014)
The electronic and optical properties of sol-gel synthesized n-ZnO/n-GaN (0001) isotype heterojunction were reported. By incorporating ZnO-GaN with the same wurtzite structure and the similar lattice constant, a heterojunction ...
Barrier height enhancement and temperature dependence of the electrical characteristics of Al Schottky contacts on p-GaAs with organic Rhodamine B interfacial layer
(2012)
In this work, two types of Schottky barrier diodes (SBDs) with and without Rhodamine B interfacial layer, were fabricated and measured at room temperature in order to investigate the effects of the Rhodamine B interfacial ...
Photovoltaic and interface state density properties of the Au/n-GaAs Schottky barrier solar cell
(2011)
The electrical and photovoltaic properties of the Au/n-GaAs Schottky barrier diode have been investigated. From the current-voltage characteristics, the electrical parameters such as, ideality factor and barrier height of ...
Analysis of barrier height inhomogeneity in Au/n-GaAs Schottky barrier diodes by Tung model
(2010)
The apparent barrier heights and ideality factors of identically fabricated gold Schottky contacts on n-GaAs (14 dots) were determined from by forward bias current-voltage characteristics at room temperature. A statistical ...