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Examination by interfacial layer and inhomogeneous barrier height model of temperature-dependent I-V characteristics in Co/p-InP contacts
(2009)
The current-voltage (I-V) characteristics of the sputtered Co/p-InP Schottky diodes have been measured in the temperature range of 80-400 K with steps of 20 K. It has been seen that the I-V characteristics of the device ...