Başlık için 6.Araştırma Çıktıları / Research Outcomes(WOS-Scopus-TR-Dizin-PubMed) listeleme
Toplam kayıt 2563, listelenen: 2111-2130
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Taxonomic significance of cypsela morphology in tribe Cichoreae (Asteraceae) using light microscopy and scanning electron microscopy
(2020)The current study deals with the detailed morphology investigation of eight Cypsela species belonging to tribe Cichoreae. The different Cypsela types were described, explained, compared, and their taxonomic significance ... -
Teachers’ opinions on the effectiveness of life science curriculum in values education
(2015)This research aims to investigate the opinions of classroom teachers on the significance level of values in Life Sciences Course Curriculum (LSCC) and the effect level of LSSC in acquisition of these values. Survey model ... -
Temperature dependence of current-voltage characteristics in highly doped Ag/ p -GaN/In Schottky diodes
(2009)To obtain detailed information about the conduction process of the Ag/ p -GaN Schottky diodes (SDs) fabricated by us, we measured the I-V characteristics over the temperature range of 80-360 K by the steps of 20 K. The ... -
Temperature dependence of electrical parameters of the Cu/n-Si metal semiconductor Schottky structures
(2021)The main electrical characteristics of Cu/n-Si metal-semiconductor structures have been investigated in the temperature range 50 K to 310 K using current–voltage (I–V) and capacitance–voltage (C–V) measurements. It has ... -
Temperature dependence of interface state density distribution determined from conductance–frequency measurements in Ni/n-GaP/Al diode
(2020)The conductance measurements of the non-annealed (D1) and 400 °C annealed (D2) Ni/n-GaP/Al diodes were made over a wide frequency range of (10 kHz to 5 MHz) and temperature of (100–320 K with steps of 20 K) with bias voltage ... -
Temperature dependent current-voltage and capacitance-voltage characteristics of chromium Schottky contacts formed by electrodeposition technique on n-type Si
(2011)The variations in the electrical properties of Cr Schottky contacts formed by electrodeposition technique on n-type Si substrate have been investigated as a function of temperature using current-voltage (I-V) and ... -
Temperature dependent dielectric properties of Au/ZnO/n-Si heterojuntion
(2018)Owing to importance of ZnO in electronics, Au/ZnO/n-type Si device was fabricated to investigate its dielectric properties by aid of capacitance-conductance-voltage measurements. While the ZnO thin film layer on the n-type ... -
Temperature dependent Seebeck coefficient and thermal conductivity properties of graphene undoped and doped Ca-Pr-Co oxide thermoelectric nanocomposites
(2019)This study aims to observe the changes in the structural characterization and physical properties of calcium-praseodymium-cobalt oxide thermoelectric materials with graphene doping. Structural characterizations were examined ... -
Temperature-dependent C-V characteristics of Au/ZnO/n-Si device obtained by atomic layer deposition technique
(2017)Since the importance of Schottkky devices, Au/ZnO/n-Si device were obtained, and the capacitance–voltage (C-V) and conductance-voltage (G-V) characteristics of Au/ZnO/n-Si device were studied using admittance spectroscopy ... -
Temperature-dependent current-voltage characteristics in thermally annealed ferromagnetic Co/n-GaN Schottky contacts
(2014)Co/n-GaN SDs has been prepared by magnetron DC sputtering technique. The Co/n-GaN SDs have annealed at 600 °C after a post-deposition. The diode parameters such as the ideality factor, barrier height and Richardson constant ... -
Temperature-dependent electrical characteristics of Alq3/p-Si heterojunction
(2018)Al/Alq3(organic materials)/p-Si device was fabricated by the use of spin coating technique, and it was investigated by using current-voltage measurement in a wide temperature range from 80 to 320 K with 20 K steps. Some ... -
Temperature-dependent I-V characteristics in thermally annealed Co/p-InP contacts
(2012)We prepared the sputtered Co/p-InP Schottky diodes which consisted of as-deposited, and diodes annealed from 200 °C to 700 °C. The annealed samples were cooled from the annealing temperature down to room temperature, and ...
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