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    • Barrier height temperature coefficient in ideal Ti/n-GaAs Schottky contacts 

      Göksu, T. and Yildirim, N. and Korkut, H. and Özdemir, A.F. and Turut, A. and Köke, A. (2010)
      We have measured the I-V characteristics of Ti/n-GaAs Schottky barrier diodes (SBDs) in the temperature range of 60-320 K by the steps of 20 K. The SBDs have been prepared by magnetron DC sputtering. The ideality factor n ...